Negative bias illumination stress assessment of indium gallium zinc oxide thin‐film transistors. Issue 5 (30th September 2015)
- Record Type:
- Journal Article
- Title:
- Negative bias illumination stress assessment of indium gallium zinc oxide thin‐film transistors. Issue 5 (30th September 2015)
- Main Title:
- Negative bias illumination stress assessment of indium gallium zinc oxide thin‐film transistors
- Authors:
- Hoshino, Ken
Wager, John - Abstract:
- Abstract: Electrical performance stability of indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) is evaluated under negative bias illumination stress (NBIS). A bottom‐gate IGZO TFT whose top surface is passivated with zinc tin silicon oxide (ZTSO) exhibits a dramatic improvement in NBIS stability compared with that of an unpassivated, bottom‐gate IGZO TFT. Oxygen chemisorption/desorption at the channel layer top surface is proposed to explain why an unpassivated TFT exhibits significantly more NBIS than a passivated TFT.
- Is Part Of:
- Journal of the Society for Information Display. Volume 23:Issue 5(2015:May)
- Journal:
- Journal of the Society for Information Display
- Issue:
- Volume 23:Issue 5(2015:May)
- Issue Display:
- Volume 23, Issue 5 (2015)
- Year:
- 2015
- Volume:
- 23
- Issue:
- 5
- Issue Sort Value:
- 2015-0023-0005-0000
- Page Start:
- 187
- Page End:
- 195
- Publication Date:
- 2015-09-30
- Subjects:
- IGZO -- NBIS
Information display systems -- Periodicals
621.38154205 - Journal URLs:
- http://ejournals.ebsco.com/direct.asp?JournalID=113697 ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1938-3657 ↗
http://scitation.aip.org/jsid/ ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/jsid.267 ↗
- Languages:
- English
- ISSNs:
- 1071-0922
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 2407.xml