MBE growth and optical properties of GaAs nanowires grown on Si(111) substrate using two-temperature steps regime. (October 2015)

• Record Type: Journal Article
• Authors: Reznik, R R; Shtrom, I V; Samsonenko, Yu B; Khrebtov, A I; Bourauvlev, A D; Soshnikov, I P; Kryzhanovskaya, N V; Cirlin, G E
• Is Part Of: Journal of physics. Number 643(2015)
• Publication Date: 2015-10
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/643/1/012003
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: We report on the growth and optical properties of pencil-like GaAs nanowires (NWs) grown using an original two-temperature growth mode on Si substrate. Optically, the NWs array is active up to the room temperature. The low-temperature PL spectra is composed by the narrow bands corresponding to the direct, bound to surface states and bound to impurity excitons. After toluene treatment, the fine structure is disappeared in the spectra.