Nanomaterial disordering in AlGaN/GaN UV LED structures. (October 2015)

• Record Type: Journal Article
• Authors: Shabunina, E I; Levinshtein, M E; Kulagina, M M; Kurin, S Yu; Chernyakov, A E; Petrov, V N; Ratnikov, V V; Smirnova, I N; Troshkov, S I; Shmidt, N M; Usikov, A S; Helava, H; Makarov, Yu N
• Is Part Of: Journal of physics. Number 643(2015)
• Publication Date: 2015-10
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/643/1/012128
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs.