Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices. (May 2015)

• Record Type: Journal Article
• Authors: Wu, Hua-Qiang; Wu, Ming-Hao; Li, Xin-Yi; Bai, Yue; Deng, Ning; Yu, Zhi-Ping; Qian, He
• Is Part Of: Chinese physics B. Volume 24:Number 5(2015:May)
• Page Start: 625
• Publication Date: 2015-05
• Subjects: Physics -- Periodicals; Physics; Periodicals; 530.05
• DOI: 10.1088/1674-1056/24/5/058501
• Languages: English
• ISSNs: 1674-1056

Abstract

<abstract> <title>Abstract</title> <p>Asymmetric resistive switching processes were observed in W:AlO_{<italic>x</italic>}/WO_{<italic>y</italic>} bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under −1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:AlO_{<italic>x</italic>}/WO_{<italic>y</italic>} device structure is proposed to explain this switching time difference.</p> </abstract>