High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition*Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the International Science and Technology Cooperation Program of Science and Technology Bureau of Changchun, China (Grant No. 12ZX68). (January 2015)

• Record Type: Journal Article
• Authors: Wang, Lian-Kai; Liu, Ren-Jun; Lü, You; Yang, Hao-Yu; Li, Guo-Xing; Zhang, Yuan-Tao; Zhang, Bao-Lin
• Is Part Of: Chinese physics B. Volume 24:Number 1(2015:Jan.)
• Page Start: 196
• Publication Date: 2015-01
• Subjects: Physics -- Periodicals; Physics; Periodicals; 530.05
• DOI: 10.1088/1674-1056/24/1/018102
• Languages: English
• ISSNs: 1674-1056

Abstract

<abstract> <title>Abstract</title> <p>Orthogonal experiments of GaSb films growth on GaAs(001) substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition (LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized GaSb thin film has a narrow full width at half maximum (358 arc sec) of the (004) <italic>ω</italic>-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of GaSb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline GaSb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.</p> </abstract>