BN‐Enabled Epitaxy of Pb1–xSnxSe Nanoplates on SiO2/Si for High‐Performance Mid‐Infrared Detection. Issue 40 (25th August 2015)

• Record Type: Journal Article
• Authors: Wang, Qisheng; Wen, Yao; Yao, Fengrui; Huang, Yun; Wang, Zhenxing; Li, Molin; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Wang, Feng; Li, Jie; Liu, Kaihui; Jiang, Chao; Liu, Fengqi; He, Jun
• Is Part Of: Small. Volume 11:Issue 40(2015)
• Page Start: 5388
• Page End: 5394
• Publication Date: 2015-08-25
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201502049
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="smll201502049-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>By designing a few‐layer boron nitried (BN) buffer layer</bold>, topological crystalline insulator Pb_{1–<italic>x</italic>}Sn<italic>_x</italic>Se nanoplates are directly grown on SiO₂/Si, which shows high compatibility with current Si‐based integrated circuit technology. Back‐gated field‐effect transistors of Pb_{1–<italic>x</italic>}Sn<italic>_x</italic>Se nanoplates exhibit a room‐temperature carrier mobility of 0.73–4.90 cm² V⁻¹ s⁻¹, comparable to layered materials and molecular crystals, and high‐efficiency mid‐IR detection (1.9–2.0 μm). <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgkv99mwq5" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>