Characterizing the Switching Thresholds of Magnetophoretic Transistors. (9th September 2015)

• Record Type: Journal Article
• Authors: Abedini‐Nassab, Roozbeh; Joh, Daniel Y.; Van Heest, Melissa A.; Yi, John S.; Baker, Cody; Taherifard, Zohreh; Margolis, David M.; Garcia, J. Victor; Chilkoti, Ashutosh; Murdoch, David M.; Yellen, Benjamin B.
• Is Part Of: Advanced materials. Volume 27:Number 40(2015)
• Page Start: 6176
• Page End: 6180
• Publication Date: 2015-09-09
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201502352
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201502352-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The switching thresholds of magnetophoretic transistors</bold> for sorting cells in microfluidic environments are characterized. The transistor operating conditions require short 20–30 mA pulses of electrical current. By demonstrating both attractive and repulsive transistor modes, a single transistor architecture is used to implement the full write cycle for importing and exporting single cells in specified array sites. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgkv860dvs" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>