An ultrawideband SPST switch using defected ground structure low pass filter in 65‐nm CMOS technology. Issue 9 (20th May 2015)

• Record Type: Journal Article
• Authors: Anak Agung, Alit Apriyana; Zhang, Yue Ping; Lim, Wei Meng
• Is Part Of: International journal of RF and microwave computer-aided engineering. Volume 25:Issue 9(2015)
• Page Start: 758
• Page End: 768
• Publication Date: 2015-05-20
• Subjects: Microwave devices -- Computer-aided design -- Periodicals; Computer-aided engineering -- Periodicals; 621.3813
• DOI: 10.1002/mmce.20912
• Languages: English
• ISSNs: 1096-4290

Abstract

<abstract abstract-type="main"> <title>ABSTRACT</title> <p>In this article, we propose a novel concept of applying a defected ground structure low pass filter (DGS LPF) to the design of switches. We highlight that the DGS structure has such advantages as consuming less silicon area and providing another degree of design freedom to optimize the switch performances. To prove the concept, we analyze, design, and characterize a single‐pole single‐throw (SPST) switch using a DGS LPF in 65‐nm CMOS technology. We show that the DGS LPF SPST switch with active size of 125 × 88 µm² can cover an ultrawideband from DC to 77 GHz. © 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:758–768, 2015.</p> </abstract>