Improvement of resistive switching fluctuations by using one step lift‐off process. Issue 10 (24th September 2015)

• Record Type: Journal Article
• Authors: Li, Yingtao; Gao, Xiaoping; Fu, Liping; Yuan, Peng; Wang, Hong; Tao, Chunlan
• Is Part Of: Physica status solidi. Volume 9:Issue 10(2015:Oct.)
• Page Start: 594
• Page End: 596
• Publication Date: 2015-09-24
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510286
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201510286-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Bipolar resistive switching characteristics are investigated in ZrO₂ containing Cu thin layer devices, particularly for the self‐isolated‐structure device fabricated by one step lift‐off process. Compared with the traditional‐structure device, the self‐isolated‐structure device shows more uniform resistive switching characteristics. This is because the isolation of each device cell has negligible influence on each other and thus mitigates possible crosstalk between each cell. These results suggest that the feasibility of good stabilization of the resistive switching parameters can be obtained through one step lift‐off process. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>