Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector. Issue 104 (11th November 2015)

• Record Type: Journal Article
• Authors: Sharma, Pankaj; Singh, Rohit; Awasthi, Vishnu; Pandey, Sushil K.; Garg, Vivek; Mukherjee, Shaibal
• Is Part Of: RSC advances. Volume 5:Issue 104(2015)
• Page Start: 85523
• Page End: 85529
• Publication Date: 2015-11-11
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra13921j
• Languages: English
• ISSNs: 2046-2069

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgks6rkstc" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Ga-doped ZnO based ultraviolet photodetectors (PDs) were fabricated with a metal–semiconductor–metal structure. The room-temperature operable PDs had 58 mA W⁻¹ responsivity at zero bias with internal and external quantum efficiency values of ∼22.5 and 37.4%.</p> </abstract>