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HARVARD Citation
Seelmann‐Eggebert, M. et al. (n.d.). On the determination of noise parameters of low‐noise transistor devices. International journal of numerical modelling. pp. 684-697. [Online].
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Seelmann‐Eggebert, M. et al. (n.d.). On the determination of noise parameters of low‐noise transistor devices. International journal of numerical modelling. pp. 684-697. [Online].