Effects of Li doping on the negative bias stress stability of solution-processed ZnO thin film transistors1. Issue 84 (16th September 2015)

• Record Type: Journal Article
• Authors: Kim, Bokyung; Park, Si Yun; Ko, Jieun; Kim, Young-Jae; Kim, Youn Sang
• Is Part Of: RSC advances. Volume 5:Issue 84(2015)
• Page Start: 68392
• Page End: 68396
• Publication Date: 2015-09-16
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra11480b
• Languages: English
• ISSNs: 2046-2069

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj2rw66781" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />To investigate the effect of Li dopant on the electrical characteristics under negative bias stress (NBS), we analysed ZnO and Li doped ZnO TFTs. The Li dopant enhanced the field effect mobility and sustained the variation in <italic>V</italic>_on of the ZnO TFTs.</p> </abstract>