Low-temperature growth of graphene using interfacial catalysis of molten gallium and diluted methane chemical vapor deposition. (September 2015)

• Record Type: Journal Article
• Authors: Hiyama, Takaki; Murakami, Katsuhisa; Kuwajima, Tomoya; Takeguchi, Masaki; Fujita, Jun-ichi
• Is Part Of: Applied physics express. Volume 8:Number 9(2015:Sep.)
• Page Start: 666
• Publication Date: 2015-09
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.095102
• Languages: English
• ISSNs: 1882-0778

Abstract

<abstract> <title>Abstract</title> <p>Although the formation of graphene nuclei conventionally requires high temperature of ∼1050 °C in the first growth stage, the presence of the graphene nuclei allowed for low-temperature edge growth, and this peripheral area continued growing even when the temperature was reduced to 300 °C in the second growth stage. The graphene grown at the second stage was a single layer with fewer defects. The Raman map showed high homogeneity with a 2D/G ratio &gt;2 over the entire contact area of molten gallium, and the hole mobility was 600 cm² V⁻¹ s⁻¹.</p> </abstract>