Paper No P23: Effect on Electrical Performance TiOx Doped InZnO Thin‐Film Transistor (TFT). Issue 1 (September 2015)

• Record Type: Journal Article
• Authors: Park, Chanhee; Lim, Yooseong; Ha, Seungsoo; Im, Yongjin; Jang, Minhyung; Choi, Seung‐il; Park, Ji‐in; Yi, Moonsuk
• Is Part Of: Digest of technical papers. Volume 46:Issue 1(2015)
• Page Start: 90
• Page End: 90
• Publication Date: 2015-09
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.10505
• Languages: English
• ISSNs: 0097-966X

Abstract

<abstract abstract-type="main"> <title>Abstract</title> <p>We investigated the electrical performance of TiO_x‐IZO Thin‐Film Transistor (TFT) changing the target composition ratio of IZO, and Radio‐Frequency (RF) power of Titanium target. Titanium and IZO target were co‐sputtered by using RF magnetron co‐sputtering system. The samples were postannealed in the air, at 300°C for 1 h. When the formation of TiO_x‐IZO rises in the film, it causes the oxygen vacancy in the film not to generate, and to suppress the carrier concentration.</p> </abstract>