Cite
HARVARD Citation
Bergsten, J. et al. (n.d.). Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures. Semiconductor science and technology. pp. 510-2. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Bergsten, J. et al. (n.d.). Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures. Semiconductor science and technology. pp. 510-2. [Online].