Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112̄0) sapphire grown by rf-molecular beam epitaxy. Issue 89 (27th September 2015)

• Record Type: Journal Article
• Authors: Shibin Krishna, T. C.; Aggarwal, Neha; Reddy, G. Anurag; Dugar, Palak; Mishra, Monu; Goswami, Lalit; Dilawar, Nita; Kumar, Mahesh; Maurya, K. K.; Gupta, Govind
• Is Part Of: RSC advances. Volume 5:Issue 89(2015)
• Page Start: 73261
• Page End: 73267
• Publication Date: 2015-09-27
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra10099b
• Languages: English
• ISSNs: 2046-2069

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj2qrrrpzn" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on <italic>a</italic>-plane (112̄0) sapphire substrate <italic>via</italic> rf-plasma molecular beam epitaxy.</p> </abstract>