High Responsivity, Broadband, and Fast Graphene/Silicon Photodetector in Photoconductor Mode. Issue 9 (12th May 2015)

• Record Type: Journal Article
• Authors: Chen, Zefeng; Cheng, Zhenzhou; Wang, Jiaqi; Wan, Xi; Shu, Chester; Tsang, Hon Ki; Ho, Ho Pui; Xu, Jian‐Bin
• Is Part Of: Advanced optical materials. Volume 3:Issue 9(2015:Sep.)
• Page Start: 1207
• Page End: 1214
• Publication Date: 2015-05-12
• Subjects: Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201500127
• Languages: English
• ISSNs: 2195-1071

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adom201500127-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A fast‐response photodetector</bold> is developed, which is highly photoresponsive and works over a broadband. It is fabricated using a combination of chemical vapor deposition graphene and silicon, together with the utilization of a lateral photoconductor operating mode. The photodetector exhibits high responsivities of ≈1.0 × 10⁴ and ≈0.23 A W⁻¹ in the visible (632 nm) and infrared regions (1550 nm), respectively. The response time is both below 3 μs in both spectral regions. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgj2n0v1kf5" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>