Controlled MoS2 layer etching using CF4 plasma. (4th September 2015)

• Record Type: Journal Article
• Authors: Jeon, Min Hwan; Ahn, Chisung; Kim, HyeongU; Kim, Kyong Nam; LiN, Tai Zhe; Qin, Hongyi; Kim, Yeongseok; Lee, Sehan; Kim, Taesung; Yeom, Geun Young
• Is Part Of: Nanotechnology. Volume 26:Number 35(2015)
• Page Start: 263
• Page End: 275
• Publication Date: 2015-09-04
• Subjects: Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/35/355706
• Languages: English
• ISSNs: 0957-4484

Abstract

<abstract> <title>Abstract</title> <p>A few-layered molybdenum disulfide (MoS₂) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF₄ inductively coupled plasma, and the possibility of controlling the MoS₂ layer thickness to a monolayer of MoS₂ over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS₂ layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS₂ was etched by exposure to a CF₄ plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS₂ layers could be controlled by exposure to the CF₄ plasma for a certain processing time. However, XPS data showed that exposure to CF₄ plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS₂ surface. After exposure to a H₂S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS₂ surface could be effectively removed.</p> </abstract>