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Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator*Supported by the National Natural Science Foundation of China under Grant Nos 61274046, 61474111 and 61321063, and the National High-Technology Research and Development Program of China under Grant No 2013AA014202. (August 2015)
Record Type:
Journal Article
Title:
Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator*Supported by the National Natural Science Foundation of China under Grant Nos 61274046, 61474111 and 61321063, and the National High-Technology Research and Development Program of China under Grant No 2013AA014202. (August 2015)
Main Title:
Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator*Supported by the National Natural Science Foundation of China under Grant Nos 61274046, 61474111 and 61321063, and the National High-Technology Research and Development Program of China under Grant No 2013AA014202.
<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f<sub>−3 <italic>dB</italic></sub> bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.</p> </abstract>