Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements. Issue 9 (September 2015)

• Record Type: Journal Article
• Authors: Fouda, M.E.; Elwakil, A.S.; Radwan, A.G.
• Is Part Of: Microelectronics journal. Volume 46:Issue 9(2015)
• Page Start: 834
• Page End: 838
• Publication Date: 2015-09
• Subjects: Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2015.06.019
• Languages: English
• ISSNs: 0959-8324

Abstract

<abstract abstract-type="author" id="ab0005"> <title id="sect0005">Abstract</title> <sec> <p id="sp0030">Pinched hysteresis is considered to be a signature of the existence of memristance. However, here we report on a model that exhibits pinched hysteresis yet it may represent a nonlinear inductor or a nonlinear capacitor (both with quadratic nonlinearity) or a derivative-controlled nonlinear resistor/transconductor. Further, the lobe area of the pinched hysteresis loop in these devices has inverse-memristor characteristics; i.e. it is observed to widen rather than decline with increased operating frequency. Experimental results are provided to validate the model.</p> </sec> </abstract>