A Solution‐Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small‐Molecule‐Based High‐Performance Ternary Electronic Memory Devices1. (14th July 2015)

• Record Type: Journal Article
• Authors: Poon, Chun‐Ting; Wu, Di; Lam, Wai Han; Yam, Vivian Wing‐Wah
• Is Part Of: Angewandte Chemie. Volume 127:Number 36(2015)
• Page Start: 10715
• Page End: 10719
• Publication Date: 2015-07-14
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1002/ange.201504997
• Languages: English
• ISSNs: 0044-8249

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>A novel small‐molecule boron(III)‐containing donor–acceptor compound has been synthesized and employed in the fabrication of solution‐processable electronic resistive memory devices. High ternary memory performances with low turn‐on (<italic>V</italic>_Th1=2.0 V) and distinct threshold voltages (<italic>V</italic>_Th2=3.3 V), small reading bias (1.0 V), and long retention time (&gt;10⁴ seconds) with a large ON/OFF ratio of each state (current ratio of "OFF", "ON1", and "ON2"=1:10³:10⁶) have been demonstrated, suggestive of its potential application in high‐density data storage. The present design strategy provides new insight in the future design of memory devices with multi‐level transition states.</p> </abstract>