Controlling crystallization to improve charge mobilities in transistors based on 2, 7-dioctyl[1]benzothieno[3, 2-b][1]benzothiophene1. Issue 34 (14th September 2015)

• Record Type: Journal Article
• Authors: Adhikari, Jwala M.; Vakhshouri, Kiarash; Calitree, Brandon D.; Hexemer, Alexander; Hickner, Michael A.; Gomez, Enrique D.
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 34(2015)
• Page Start: 8799
• Page End: 8803
• Publication Date: 2015-09-14
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc01253h
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj2g34cmbs" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />We demonstrate that melting followed by quenching at a fixed temperature can obviate prior processing, control the crystallization process, and lead to enhanced charge mobilities in thin-film transistors based on C8-BTBT active layers.</p> </abstract>