Two‐energy‐scale model for description of the thermal quenching of photoluminescence in disordered Ga(As, Bi). Issue 8 (5th June 2015)

• Record Type: Journal Article
• Authors: Shakfa, M. K.; Wiemer, M.; Ludewig, P.; Jandieri, K.; Volz, K.; Stolz, W.; Baranovskii, S. D.; Koch, M.; Seibt, M.
• Is Part Of: Physica status solidi. Volume 12:Issue 8(2015:Aug.)
• Page Start: 1187
• Page End: 1190
• Publication Date: 2015-06-05
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400369
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The thermal quenching of the photoluminescence (PL) intensity in Ga(As, Bi)/GaAs heterostructures is studied experimentally and theoretically. We observed an anomalous plateau in the PL thermal quenching at intermediate temperatures under low excitation conditions. Our theoretical analysis based on a well‐approved theoretical approach shows that this peculiar behavior of the temperature‐dependent PL intensity cannot be interpreted assuming a single‐scale monotonously energy‐dependent density of localized states (DOS). Experimental data clearly point at a non‐monotonous DOS with at least two energy scales. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>