Thermal activation and temperature dependent PL and CL of Tb doped amorphous AlN and SiN thin films. Issue 8 (22nd July 2015)

• Record Type: Journal Article
• Authors: Guerra, J. Andres; Montañez, Liz; Winnacker, Albrecht; De Zela, Francisco; Weingärtner, Roland; Seibt, M.
• Is Part Of: Physica status solidi. Volume 12:Issue 8(2015:Aug.)
• Page Start: 1183
• Page End: 1186
• Publication Date: 2015-07-22
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400226
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The effect of terbium (Tb) doping on the photoluminescence (PL) and cathodoluminescence (CL) spectra of amorphous aluminum nitride (<italic>a</italic> ‐AlN) and amorphous silicon nitride (<italic>a</italic> ‐SiN) thin films has been investigated for different temperature conditions. The samples were prepared by RF dual magnetron reactive sputtering technique with a Tb concentration of about ∼1 at% An enhancement of the light emission is obtained after thermal annealing treatments following the activation of luminescent centers. Furthermore, the Tb related integrated light emission intensity is reported exhibiting a continuous increase with the samples temperature well below thermal quenching for both materials. This behavior suggests a phonon assisted energy migration mechanism which contributes to the effective energy transfer from the matrix to the Tb ions. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>