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Wierzchowski, W. et al. (2015). Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions. X-ray spectrometry. pp. 371-378. [Online].
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Wierzchowski, W. et al. (2015). Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions. X-ray spectrometry. pp. 371-378. [Online].