Field‐Effect Transistors: Selecting Semiconducting Single‐Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide‐Based Polymers (Adv. Electron. Mater. 8/2015). (17th August 2015)

• Record Type: Journal Article
• Authors: Salazar‐Rios, Jorge Mario; Gomulya, Widianta; Derenskyi, Vladimir; Yang, Jie; Bisri, Satria Zulkarnaen; Chen, Zhihua; Facchetti, Antonio; Loi, Maria Antonietta
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 8(2015:Aug.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-08-17
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201570027
• Languages: English
• ISSNs: 2199-160X

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="aelm201570027-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>In article number 1500074, Maria Antonietta Loi and co‐workers describe a transistor structure where a network of semiconducting single‐walled carbon nanotubes connects the source and drain gold electrodes and a naphthalene diimide‐based conjugated polymer (PE‐N‐73) is wrapped around the tubes to keep them individualized. The sparks allocated in the junctions between the tubes in the inside cover image portray the charge hopping from one tube to the other, which is not diminished by the presence of PE‐N‐73. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgj2ffrgt9m" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>