1D and 2D Bi Compounds in Field‐Effect Transistors. (14th July 2015)

• Record Type: Journal Article
• Authors: Uesugi, Eri; Nishiyama, Saki; Akiyoshi, Hidehiko; Goto, Hidenori; Koike, Yoji; Yamada, Kazuyoshi; Kubozono, Yoshihiro
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 8(2015:Aug.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-07-14
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500085
• Languages: English
• ISSNs: 2199-160X

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="aelm201500085-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The properties of field‐effect transistors (FETs) with single crystals of Bi compounds, Bi₂CuO₄ and LaOBiS₂</bold>, are investigated using an electric‐double‐layer capacitor. The observation of FET characteristics due to electrostatic carrier accumulation is very significant for the field‐induced control of physical properties of these crystals, which may produce the novel physical properties such as superconductivity. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgj2ffrgx3v" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>