Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2). (3rd July 2015)

• Record Type: Journal Article
• Authors: Keyshar, Kunttal; Gong, Yongji; Ye, Gonglan; Brunetto, Gustavo; Zhou, Wu; Cole, Daniel P.; Hackenberg, Ken; He, Yongmin; Machado, Leonardo; Kabbani, Mohamad; Hart, Amelia H. C.; Li, Bo; Galvao, Douglas S.; George, Antony; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M.
• Is Part Of: Advanced materials. Volume 27:Number 31(2015)
• Page Start: 4640
• Page End: 4648
• Publication Date: 2015-07-03
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201501795
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201501795-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The direct synthesis of monolayer and multilayer ReS₂</bold> by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field‐effect transistor characteristics are evaluated, which highlight the potential in being used as an n‐type semiconductor. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgj2f6z09gn" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>