Atomic layer deposition of transparent semiconducting oxide CuCrO2 thin films. Issue 32 (28th August 2015)

• Record Type: Journal Article
• Authors: Tripathi, T. S.; Niemelä, Janne-Petteri; Karppinen, Maarit
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 32(2015)
• Page Start: 8364
• Page End: 8371
• Publication Date: 2015-08-28
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc01384d
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj2ds2rg4b" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Atomic layer deposition (ALD) is a vital gas-phase technique for atomic-level thickness-controlled deposition of high-quality thin films of CuCrO₂ on various substrate morphologies owing to its self-limiting gas-surface reaction mechanism.</p> </abstract>