Determining doping efficiency and mobility from conductivity and Seebeck data of n‐doped C60 layers. Issue 8 (9th April 2015)

• Record Type: Journal Article
• Authors: Menke, Torben; Ray, Debdutta; Kleemann, Hans; Leo, Karl; Riede, Moritz
• Is Part Of: Physica status solidi. Volume 252:Issue 8(2015:Aug.)
• Page Start: 1877
• Page End: 1883
• Publication Date: 2015-04-09
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201552088
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201552088-sec-0001" sec-type="section"> <p>In this work, we introduce models for deriving lower limits for the key parameters doping efficiency, charge carrier concentration, and charge carrier mobility from conductivity data of doped organic semiconductors. The models are applied to data of thin layers of Fullerene C₆₀ n‐doped by four different n‐dopants. Combining these findings with thermoelectric Seebeck data, the energetic position of the transport level can be narrowed down and trends for the absolute values are derived.</p> </sec> </abstract>