Molecular Dynamics Calculations of CH3 Sticking Coefficient onto Diamond Surfaces. Issue 8 (24th February 2015)

• Record Type: Journal Article
• Authors: Schwaederlé, Laurent; Brault, Pascal; Rond, Cathy; Gicquel, Alix
• Is Part Of: Plasma processes and polymers. Volume 12:Issue 8(2015:Aug.)
• Page Start: 764
• Page End: 770
• Publication Date: 2015-02-24
• Subjects: Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201400223
• Languages: English
• ISSNs: 1612-8850

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="ppap201400223-sec-0001" sec-type="section"> <p>A molecular dynamics model is implemented in a way dedicated to simulate initial conditions close to microwave plasma deposition of thick single crystal diamond films. The sticking coefficient of CH₃ radical is obtained for (111) and (100) surface at three gas and substrate temperatures: 1 120, 1 200, and 1 500 K. A low value of 5.10⁻⁴ is obtained, which is consistent with experimental findings claiming values less than 0.01 or equating to 8.10⁻³ at 1 120 K.<inline-graphic xlink:href="ark:/27927/pgj2dsjg8pg" content-type="ppap201400223-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </sec> </abstract>