Cu(In, Ga)Se2 solar cell with 16.7% active‐area efficiency achieved by sputtering from a quaternary target. Issue 8 (13th March 2015)

• Record Type: Journal Article
• Authors: Ouyang, Liangqi; Zhuang, Daming; Zhao, Ming; Zhang, Ning; Li, Xiaolong; Guo, Li; Sun, Rujun; Cao, Mingjie
• Is Part Of: Physica status solidi. Volume 212:Issue 8(2015:Aug.)
• Page Start: 1774
• Page End: 1778
• Publication Date: 2015-03-13
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532005
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201532005-sec-0001" sec-type="section"> <p>In this work, we report the fabrication method of sputtering from a CIGS quaternary target to obtain high‐efficiency CIGS thin‐film solar‐cell devices. The as‐deposited CIGS absorbers are prepared by sputtering from a CIGS target and a subsequent annealing treatment under the Ar + H₂Se (5% H₂Se) atmosphere is applied on the absorbers. A high conversion efficiency of 16.7% is achieved with an average conversion efficiency of 15.9% over 10 cm × 10 cm on soda‐lime glass. This result shows sputtering directly from a quaternary CIGS target is a very promising fabrication method to obtain high‐performance solar‐cell devices and is suitable for the further fabrication of large‐area devices and modules. <inline-graphic xlink:href="ark:/27927/pgj2dckcrxm" content-type="pssa201532005-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> <p> <italic>J</italic>–<italic>V</italic> characteristic curve of the CIGS solar cell with the best efficiency achieved by sputtering from a quaternary target.</p> </sec> </abstract>