Performance enhancement of gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure. Issue 8 (18th February 2015)

• Record Type: Journal Article
• Authors: Yin, Luqiao; Bai, Yang; Nan, Tingting; Zhang, Jianhua
• Is Part Of: Physica status solidi. Volume 212:Issue 8(2015:Aug.)
• Page Start: 1725
• Page End: 1730
• Publication Date: 2015-02-18
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201431821
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201431821-sec-0001" sec-type="section"> <p>For the study of the performance enhancement of a gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure (FC‐LED), FC‐LED and conventional high‐power light‐emitting diode (HP‐LED) were fabricated simultaneously with the same epitaxial structures and packaging processes. The optoelectronic results showed that the FC‐LED's performance of the multiple indices for radiant light and voltage parameters were, respectively, better than that of the conventional HP‐LED. One reason for this was that the thermal resistance of the FC‐LED chip was about 54% lower, which would induce less heat‐flux generation. This was in accordance with the simulation results of the p–n junction temperature. Another reason for this was that the extra parasitic resistance in the conventional HP‐LED chip would cause higher voltages and lower multiple indices of radiant power.</p> </sec> </abstract>