Ambipolar behavior of Te and its effect on the optical emission of ZnO:Te epitaxial thin film. Issue 8 (26th February 2015)

• Record Type: Journal Article
• Authors: Sahu, R.; Dileep, K.; Negi, D. S.; Nagaraja, K. K.; Datta, R.
• Is Part Of: Physica status solidi. Volume 252:Issue 8(2015:Aug.)
• Page Start: 1743
• Page End: 1748
• Publication Date: 2015-02-26
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201451443
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201451443-sec-0001" sec-type="section"> <p>We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for Te_O compared to Te_Zn. Emission at 3 eV for Te_Zn, irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7 eV is obtained for Te_O and is in agreement with modified Becke–Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.</p> </sec> </abstract>