Transistors fabricated using the single crystals of [8]phenacene1. Issue 28 (28th July 2015)

• Record Type: Journal Article
• Authors: Shimo, Yuma; Mikami, Takahiro; Murakami, Hiroto T.; Hamao, Shino; Goto, Hidenori; Okamoto, Hideki; Gohda, Shin; Sato, Kaori; Cassinese, Antonio; Hayashi, Yasuhiko; Kubozono, Yoshihiro
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 28(2015)
• Page Start: 7370
• Page End: 7378
• Publication Date: 2015-07-28
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc00960j
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj26b8nbd8" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Field-effect transistors have been fabricated using [8]phenacene single-crystals, showing the maximum <italic>μ</italic> value of 8.2 cm² V⁻¹ s⁻¹. The CMOS inverter circuit has also been fabricated.</p> </abstract>