High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films. (17th June 2015)

• Record Type: Journal Article
• Authors: Yuan, Y; Wang, Y; Gao, K; Khalid, M; Wu, C; Zhang, W; Munnik, F; Weschke, E; Baehtz, C; Skorupa, W; Helm, M; Zhou, S
• Is Part Of: Journal of physics. Volume 48:Number 23(2015)
• Page Start: 965
• Page End: 44
• Publication Date: 2015-06-17
• Subjects: Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/48/23/235002
• Languages: English
• ISSNs: 0022-3727

Abstract

<abstract> <title>Abstract</title> <p>We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In_{1−<italic>x</italic>}Mn_{<italic>x</italic>}As epilayer depends on the Mn concentration <italic>x</italic>, reaching 82 K for <italic>x</italic> = 0.105. The substitution of Mn ions at the indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of the electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.</p> </abstract>