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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz*Supported by the National Basic Research Program of China under Grant No 2011CB301900, and the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011010 and BY2013077. (July 2015)
Record Type:
Journal Article
Title:
Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz*Supported by the National Basic Research Program of China under Grant No 2011CB301900, and the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011010 and BY2013077. (July 2015)
Main Title:
Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz*Supported by the National Basic Research Program of China under Grant No 2011CB301900, and the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011010 and BY2013077.
<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>A common base four-finger InGaAs/InP double heterojunction bipolar transistor with 535 GHz f<sub>max</sub> by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain (MSG/MAG) and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.</p> </abstract>