A 76.8 MHz temperature compensated MEMS reference oscillator for wireless handsets. Issue 6 (June 2015)
- Record Type:
- Journal Article
- Title:
- A 76.8 MHz temperature compensated MEMS reference oscillator for wireless handsets. Issue 6 (June 2015)
- Main Title:
- A 76.8 MHz temperature compensated MEMS reference oscillator for wireless handsets
- Authors:
- Kourani, Ali
Hegazi, Emad
Ismail, Yehea - Abstract:
- <abstract abstract-type="author" id="ab0005"> <title id="sect0005">Abstract</title> <sec> <p id="sp0130">This paper reports on the design of a low phase noise 76.8 MHz <italic>AlN</italic>-on-silicon reference oscillator using <inline-formula><alternatives><inline-graphic xlink:href="ark:/27927/pgj24fgpwn2" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="si0021.gif" overflow="scroll" id="d13e1268" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math></alternatives></inline-formula> as temperature compensation material. The paper presents profound theoretical optimization of all the important parameters for <italic>AlN</italic>-on-silicon width extensional mode resonators, filling into the knowledge gap targeting the tens of megahertz frequency range for this type of resonators. Low loading CMOS cross coupled series resonance oscillator is used to reach the-state-of-the-art LTE phase noise specifications. Phase noise of −123 dBc/Hz at 1 kHz, and −162 dBc/Hz at 1 MHz offset is achieved. The oscillator׳s integrated root mean square RMS jitter is 106 fs (10 kHz to 20 MHz), consuming 850 μA, with startup time of 250 μs, and a figure-of-merit FOM of 216 dB. This work offers a platform for high performance MEMS reference oscillators; where, it shows the applicability of replacing bulky quartz with MEMS resonators in<abstract abstract-type="author" id="ab0005"> <title id="sect0005">Abstract</title> <sec> <p id="sp0130">This paper reports on the design of a low phase noise 76.8 MHz <italic>AlN</italic>-on-silicon reference oscillator using <inline-formula><alternatives><inline-graphic xlink:href="ark:/27927/pgj24fgpwn2" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="si0021.gif" overflow="scroll" id="d13e1268" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math></alternatives></inline-formula> as temperature compensation material. The paper presents profound theoretical optimization of all the important parameters for <italic>AlN</italic>-on-silicon width extensional mode resonators, filling into the knowledge gap targeting the tens of megahertz frequency range for this type of resonators. Low loading CMOS cross coupled series resonance oscillator is used to reach the-state-of-the-art LTE phase noise specifications. Phase noise of −123 dBc/Hz at 1 kHz, and −162 dBc/Hz at 1 MHz offset is achieved. The oscillator׳s integrated root mean square RMS jitter is 106 fs (10 kHz to 20 MHz), consuming 850 μA, with startup time of 250 μs, and a figure-of-merit FOM of 216 dB. This work offers a platform for high performance MEMS reference oscillators; where, it shows the applicability of replacing bulky quartz with MEMS resonators in cellular platforms.</p> </sec> </abstract> … (more)
- Is Part Of:
- Microelectronics journal. Volume 46:Issue 6(2015)
- Journal:
- Microelectronics journal
- Issue:
- Volume 46:Issue 6(2015)
- Issue Display:
- Volume 46, Issue 6 (2015)
- Year:
- 2015
- Volume:
- 46
- Issue:
- 6
- Issue Sort Value:
- 2015-0046-0006-0000
- Page Start:
- 496
- Page End:
- 505
- Publication Date:
- 2015-06
- Subjects:
- Microelectronics -- Periodicals
Microélectronique -- Périodiques
Microelectronics
Electronic journals
Journals - contents and abstracts
Periodicals
621.3805 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/5877621.html ↗
http://www.sciencedirect.com/science/journal/00262692 ↗
http://www.intute.ac.uk/sciences/cgi-bin/fullrecord.pl?handle=lesa.1012319367 ↗
http://www.elsevier.com/journals ↗
http://www.elsevier.com/homepage/elecserv.htt ↗ - DOI:
- 10.1016/j.mejo.2015.03.008 ↗
- Languages:
- English
- ISSNs:
- 0959-8324
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5758.973000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 4182.xml