Asymmetry in electrical properties of Al‐doped TiO2 film with respect to bias voltage. Issue 7 (2nd July 2015)

• Record Type: Journal Article
• Authors: Jeon, Woojin; Rha, Sang Ho; Lee, Woongkyu; An, Cheol Hyun; Chung, Min Jung; Kim, Sang Hyun; Cho, Cheol Jin; Kim, Seong Keun; Hwang, Cheol Seong
• Is Part Of: Physica status solidi. Volume 9:Issue 7(2015:Jul.)
• Page Start: 410
• Page End: 413
• Publication Date: 2015-07-02
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510146
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201510146-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The energy diagram of RuO₂/Al‐doped TiO₂/RuO₂ structures was estimated from the capacitance–voltage and leakage current density–voltage curves. The Al‐doping profile in TiO₂ film was varied by changing position of the atomic layer deposition cycle of Al₂O₃ during the atomic layer deposition of 9 nm‐thick TiO₂ film. The interface between the TiO₂ film and the RuO₂ electrode containing Al‐doping layer showed a higher Schottky barrier by 0.1 eV compared with the opposite interface without the doping layer. The evolution of various leakage current profiles upon increasing the bias with opposite polarity could be well explained by the asymmetric Schottky barrier. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>