Optimized emitter contacting on multicrystalline silicon thin film solar cells. Issue 7 (18th June 2015)

• Record Type: Journal Article
• Authors: Gawlik, A.; Höger, I.; Bergmann, J.; Plentz, J.; Schmidt, T.; Falk, F.; Andrä, G.
• Is Part Of: Physica status solidi. Volume 9:Issue 7(2015:Jul.)
• Page Start: 397
• Page End: 400
• Publication Date: 2015-06-18
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510186
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201510186-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>We present an optimized contacting scheme for multicrystalline silicon thin film solar cells on glass based on epitaxially crystallized emitters with a thin Al₂O₃ layer and a silver back reflector. In a first step a 6.5 µm thick amorphous silicon absorber layer is crystallized by a diode laser. In a second step a thin silicon emitter layer is epitaxially crystallized by an excimer laser. The emitter is covered by an Al₂O₃ layer with a thickness ranging from 1.0 nm to 2.5 nm, which passivates the surface and acts as a tunnel barrier. On top of the Al₂O₃ layer a 90–100 nm thick silver back reflector is deposited. The Al₂O₃ layer was found to have an optimal thickness of 1.5 nm resulting in solar cells with back reflector that achieve a maximum open‐circuit voltage of 567 mV, a short‐circuit current density of 27.9 mA/cm², and an efficiency of 10.9%. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>