Electrical in‐situ characterisation of interface stabilised organic thin‐film transistors. Issue 7 (14th July 2015)

• Record Type: Journal Article
• Authors: Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara
• Is Part Of: Physica status solidi. Volume 9:Issue 7(2015:Jul.)
• Page Start: 420
• Page End: 424
• Publication Date: 2015-07-14
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510169
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201510169-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>We report on the electrical in‐situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom‐gate/bottom‐contact (coplanar) configuration are electrically characterised in‐situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO₂ with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor param‐ eters is studied on a bi‐layer dielectric of a 150 nm of SiO₂ and 20 nm of poly((±)endo, exo‐bicyclo[2.2.1]hept‐5‐ene‐2, 3‐dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO₂ dielectric. The thin layer of PNDPE, which is an intrinsically photo‐patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>