Evolution in the Electronic Structure of Polymer‐derived Amorphous Silicon Carbide. Issue 7 (19th April 2015)

• Record Type: Journal Article
• Authors: Wang, Kewei; Li, Xuqin; Ma, Baisheng; Zhang, Min; Liu, Jinling; Wang, Yiguang; Zhang, Ligong; An, Linan; Riedel, R.
• Is Part Of: Journal of the American Ceramic Society. Volume 98:Issue 7(2015)
• Page Start: 2153
• Page End: 2158
• Publication Date: 2015-04-19
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.13598
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" id="jace13598-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The electronic structure of polymer‐derived amorphous silicon carbide pyrolyzed at different temperatures was investigated by combining measurements of their temperature‐dependent conductivity and optical absorption. By comparing the experimental results with theoretical models, the parameters such as conduction band, band‐tail, defect energy, and Fermi energy were determined. The results revealed that band gap and band‐tail width decreased with increasing pyrolysis temperature. Furthermore, it was found that electrons transport followed a band‐tail hopping mechanism, rather than variable range hopping. These results were discussed in accordance with the microstructural evolutions of the material.</p> </abstract>