MgGa2O4 as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals. Issue 7 (29th January 2015)

• Record Type: Journal Article
• Authors: Galazka, Zbigniew; Klimm, Detlef; Irmscher, Klaus; Uecker, Reinhard; Pietsch, Mike; Bertram, Rainer; Naumann, Martin; Albrecht, Martin; Kwasniewski, Albert; Schewski, Robert; Bickermann, Matthias
• Is Part Of: Physica status solidi. Volume 212:Issue 7(2015:Jul.)
• Page Start: 1455
• Page End: 1460
• Publication Date: 2015-01-29
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201431835
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201431835-sec-0001" sec-type="section"> <p>Bulk MgGa<sub>2</sub>O<sub>4</sub> single crystals with inverse spinel structure were grown from the melt by different methods. The degree of inversion could be changed by suitable annealing, which was confirmed by differential scanning calorimetry analysis and corresponding changes of the specific heat capacity. MgGa<sub>2</sub>O<sub>4</sub> is thermally much more stable at high temperatures than β‐Ga<sub>2</sub>O<sub>3</sub> despite of a higher melting point of about 1930 °C and could be grown under a neutral atmosphere. Melt‐grown MgGa<sub>2</sub>O<sub>4</sub> crystals were found to be either electrical insulators or n‐type semiconductors depending on the presence of oxygen in the growth atmosphere and the growth method applied. Growing the crystals in the presence of oxygen resulted in electrically insulating crystals. For as‐grown and intentionally undoped semiconducting crystals, the free electron concentration was in the range of 10<sup>17</sup>–10<sup>18</sup> cm<sup>−3</sup>, but the electron mobility was relatively low, just a few cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. The free electron concentration remained at a level of 10<sup>18</sup> cm<sup>−3</sup> after annealing in a hydrogen‐containing atmosphere at 600–900 °C for 10 h. On the other hand, annealing in an oxygen‐containing atmosphere above 600 °C for 10–40 h turns the crystals from the semiconducting to the insulating state. The optical bandgap at room temperature amounts to about 4.9 eV. It decreases with temperature at a rate of 1.35 meV/K. Cathodoluminescence spectra of as‐grown crystals show a dominant band at 362 nm. The melt‐grown crystals have sufficient size and structural quality to be used as substrates for epitaxy.</p> </sec> </abstract>