Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls. (22nd May 2015)

• Record Type: Journal Article
• Authors: Heo, Hoseok; Sung, Ji Ho; Jin, Gangtae; Ahn, Ji‐Hoon; Kim, Kyungwook; Lee, Myoung‐Jae; Cha, Soonyoung; Choi, Hyunyong; Jo, Moon‐Ho
• Is Part Of: Advanced materials. Volume 27:Number 25(2015)
• Page Start: 3803
• Page End: 3810
• Publication Date: 2015-05-22
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201500846
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201500846-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>2D vertical stacking and lateral stitching growth</bold> of monolayer (ML) hexagonal transition‐metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS₂ and WS₂ MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor‐phase growth. It enables the creation of hexagon‐on‐hexagon unit‐cell stacking and hexagon‐by‐hexagon stitching without interlayer rotation misfits. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgj1d0h9fx6" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>