Multistep deposition of Cu2Si(S, Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells. Issue 6 (29th May 2015)

• Record Type: Journal Article
• Authors: ElAnzeery, Hossam; Buffière, Marie; Messaoud, Khaled Ben; Oueslati, Souhaib; Brammertz, Guy; Daif, Ounsi El; Cheyns, David; Guindi, Rafik; Meuris, Marc; Poortmans, Jef
• Is Part Of: Physica status solidi. Volume 9:Issue 6(2015:Jun.)
• Page Start: 338
• Page End: 343
• Publication Date: 2015-05-29
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510125
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201510125-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Cu₂ZnSi(S, Se)₄ and Cu₂Si(S, Se)₃ are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu₂SiS₃, Cu₂SiSe₃and Cu₂ZnSiSe₄thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X‐ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu₂Si(S, Se)₃ and Cu₂ZnSiSe₄phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu₂SiSe₃ and Cu₂SiS₃, and quaternary Cu₂ZnSiSe₄ based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>