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HARVARD Citation
Cai, J. et al. (n.d.). A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques*Project supported by the National Natural Science Foundation of China (No. 61306039) and the Next Generation of Information Technology for Sensing China (No. XDA06020401).. Journal of semiconductors. pp. 167-. [Online].