High‐Surface‐Area Nitrogen‐Doped Reduced Graphene Oxide for Electric Double‐Layer Capacitors. Issue 11 (27th April 2015)

• Record Type: Journal Article
• Authors: Youn, Hee‐Chang; Bak, Seong‐Min; Kim, Myeong‐Seong; Jaye, Cherno; Fischer, Daniel A.; Lee, Chang‐Wook; Yang, Xiao‐Qing; Roh, Kwang Chul; Kim, Kwang‐Bum
• Is Part Of: ChemSusChem. Volume 8:Issue 11(2015:Jun.)
• Page Start: 1875
• Page End: 1884
• Publication Date: 2015-04-27
• Subjects: Green chemistry -- Periodicals; Sustainable engineering -- Periodicals; Chemistry -- Periodicals; Chemical engineering -- Periodicals; 660
• DOI: 10.1002/cssc.201500122
• Languages: English
• ISSNs: 1864-5631

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>A two‐step method consisting of solid‐state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen‐doped reduced graphene oxide (N‐RGO) with a high specific surface area (1007 m² g⁻¹), high electrical conductivity (1532 S m⁻¹), and low oxygen content (1.5 wt %) for electrical double‐layer capacitor applications. The specific capacitance of N‐RGO was 291 F g⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, which indicated a very good rate capability. N‐RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near‐edge X‐ray absorption fine‐structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N‐RGO. The good electrochemical performance of N‐RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.</p> </abstract>