Low‐Pressure Plasma After‐Treatment of Pollutants Emitted During Semiconductor Manufacturing. Issue 6 (21st May 2015)

• Record Type: Journal Article
• Authors: Hur, Min; Lee, Jae Ok; Kang, Woo Seok; Song, Young‐Hoon
• Is Part Of: Plasma processes and polymers. Volume 12:Issue 6(2015:Jun.)
• Page Start: 583
• Page End: 593
• Publication Date: 2015-05-21
• Subjects: Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201500046
• Languages: English
• ISSNs: 1612-8850

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="ppap201500046-sec-0001" sec-type="section"> <p>Feasibility tests of abating and stabilizing pollutants emitted during semiconductor manufacturing are performed by using a plasma reactor placed before a vacuum pump. Abatement characteristics of N₂O, CF₄, CHF₃, NF₃, C₃H₆, and TEMAZ are investigated by analyzing the data obtained by using Fourier transform infrared spectroscopy and gas chromatography. The size of byproduct particles is identified by using a particle sampler. Analysis is focused on the role of reactant gases (O₂ or H₂O) during abatement. Finally, the applicability of low‐pressure plasma after‐treatment technology is discussed from the environmental and economic points of view.<inline-graphic xlink:href="ark:/27927/pgj11pxf982" content-type="ppap201500046-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </sec> </abstract>