Fabrication of 5.2% efficient Cu2ZnSn(S, Se)4 solar cells using DC‐sputtered metal precursors followed by sulfo‐selenization. Issue 6 (5th May 2015)

• Record Type: Journal Article
• Authors: Yang, Han Sung; Agawane, Ganesh; Shin, Seung Wook; Vanalakar, Sharadrao; Jung, Woo Lim; Kim, Jin Hyeok; Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: 708
• Page End: 712
• Publication Date: 2015-05-05
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400287
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In this study, we report Cu₂ZnSn(S, Se)₄ (CZTSSe) thin films synthesized by using a rapid thermal annealing process of direct current sputtered precursors under a sulfur and selenium atmosphere. X‐ray diffraction and Raman spectroscopy investigations showed formation of CZTSSe absorber layer without any secondary phase. X‐ray fluorescence spectroscopy showed a stoichiometric absorber layer has been formed which is suitable for use in solar cells. The best thin film solar cell of CZTSSe showed a photovoltaic performance of 5.2% efficiency (V_oc: 585.0 mV, J_sc: 17.0 mA/cm² and <italic>FF</italic>: 52.0%). This is the highest efficiency reported for CZTSSe prepared from sputtered Cu/Zn/Sn precursors followed by sulfo‐selenization using powder sources. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>