Cover Picture: Phys. Status Solidi C 6/2015. Issue 6 (June 2015)

• Record Type: Journal Article
• Authors: Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-06
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201570086
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) based material possesses highly suitable optical properties if it is used as an absorber layer of thin film solar cells (TFSCs). The main two reasons behind its suitability are as follows: optimal band gap energy of 1.5 eV, which is essential for the absorber layer and an absorption coefficient of over 10<sup>4</sup> cm<sup>–1</sup> which covers a large portion of UV–visible light. In addition, CZTS is rare‐earth metal free and contains non‐toxic elements. Because of these significant features, CZTS is believed to be one of the promising materials for application in TFSCs. In the paper of Han Sung Yang and coworkers (pp. 708–712), Cu<sub>2</sub>ZnSn(S, Se)<sub>4</sub> (CZTSSe) thin film solar cells were fabricated using direct current sputtered Cu/Sn/Zn metallic layered precursors. A rapid thermal annealing process has been performed for sulfo‐selenization process of precursor under a sulfur and selenium atmosphere using S powder and Se pelltes. X‐ray diffraction and Raman spectroscopy investigations showed the formation of CZTSSe absorber layer without any secondary phase. X‐ray fluorescence spectroscopy showed a stoichiometric absorber layer being formed which is suitable for use in solar cells. The best thin film solar cell of CZTSSe showed a photovoltaic performance of 5.2% efficiency (<italic>V</italic><sub>oc</sub>: 585.0 mV, <italic>J</italic><sub>sc</sub>: 17.0 mA/cm<sup>2</sup> and FF: 52.0%). This is the highest efficiency reported for CZTSSe prepared from sputtered Cu/Zn/Sn precursors followed by sulfo‐selenization using powder sources.</p> <p> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgj11px4kd2" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> </p> </abstract>